Dislocation reactions in hetero‐epitaxial (0001) GaN layers-Reference-Cited by-同舟云学术

Dislocation reactions in hetero‐epitaxial (0001) GaN layers

Published:2011-07-07 Issue:11 Volume:208 Page:2666-2670
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Meng F. Y.¹,Mahajan S.²

Affiliation:

1. School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, AZ 85287, USA

2. Department of Chemical Engineering and Materials Science, University of California, Davis, CA 95616, USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201127140

Reference23 articles.

1. GaN Growth Using GaN Buffer Layer

2. Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition

3. Gallium nitride epitaxy on (0001) sapphire

4. Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy

5. Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire

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