Dislocation reactions in hetero‐epitaxial (0001) GaN layers
Author:
Affiliation:
1. School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, AZ 85287, USA
2. Department of Chemical Engineering and Materials Science, University of California, Davis, CA 95616, USA
Publisher
Wiley
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201127140
Reference23 articles.
1. GaN Growth Using GaN Buffer Layer
2. Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition
3. Gallium nitride epitaxy on (0001) sapphire
4. Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy
5. Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire
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1. Growth and Impact of Intrinsic Interlayers in High Temperature Vapor Phase Epitaxy of GaN;2023
2. Growth design for high quality AlxGa(1−x)N layer with high AlN-fraction on Si (1 1 1) substrate by MOCVD;Journal of Crystal Growth;2022-01
3. Design rules for dislocation filters;Journal of Applied Physics;2014-08-14
4. Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers;Applied Physics Letters;2013-09-30
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