Design rules for dislocation filters-Reference-Cited by-同舟云学术

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Design rules for dislocation filters

Published:2014-08-14 Issue:6 Volume:116 Page:063508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ward T.¹,Sánchez A. M.¹,Tang M.²,Wu J.²,Liu H.²,Dunstan D. J.³,Beanland R.¹

Affiliation:

1. Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

2. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom

3. School of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4892162

Reference66 articles.

1. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

2. GaAs epitaxy on Si substrates: modern status of research and engineering

3. Dislocations and their reduction in GaN

4. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

5. III–V semiconductor devices integrated with silicon

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3. Growth and impact of intrinsic interlayers in high temperature vapor phase epitaxy of GaN;Journal of Crystal Growth;2024-06

4. Ultrashallow heavily constrained quantum wells: The cradle for fully electrically controlled and microwave coupled quantum bits;Physical Review Materials;2024-04-25

5. Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon;Journal of Physics D: Applied Physics;2024-02-29

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