Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4823474
Reference42 articles.
1. Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods
2. Metal organic vapour phase epitaxy of GaN and lateral overgrowth
3. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
4. Dislocations and their reduction in GaN
5. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
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