Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films-Reference-Cited by-同舟云学术

Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films

Published:2014-11-18 Issue:1 Volume:47 Page:154-160
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Arshi Nishat¹,Lu Junqing²,Joo Yun Kon¹,Yoon Jae Hong¹,Koo Bon Heun¹

Affiliation:

1. School of Nano and Advanced Materials Engineering; Changwon National University; Changwon Gyeongnam 641-773 Korea

2. Advanced Materials Engineering; Keimyung University; Daegu 704-701 Korea

Funder

Bisa Research Grant of Keimyung University in 2014

the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology

the Korea Ministry of Science, ICT & Future Planning under the Information Technology Research Centre support program supervised by the National IT Industry Promotion Agenecy

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.5691/fullpdf

Reference60 articles.

1. Diffusion barrier property of TaN between Si and Cu

2. Properties of reactively sputter-deposited TaN thin films

3. Reactive sputter deposition and properties of TaxN thin films

4. Investigation of reactively sputtered TiN films for diffusion barriers

5. High‐temperature contact structures for silicon semiconductor devices

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