Role of Surface Chemistry of Ta Metal Foil on the Growth of GaN Nanorods by Laser Molecular Beam Epitaxy and Their Field Emission Characteristics-Reference-Cited by-同舟云学术

Role of Surface Chemistry of Ta Metal Foil on the Growth of GaN Nanorods by Laser Molecular Beam Epitaxy and Their Field Emission Characteristics

Published:2024-03-01 Issue:10 Volume:16 Page:13178-13190
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Pradhan Bipul Kumar¹²,Tyagi Prashant¹²,Pal Samanta³²,Mauraya Amit Kumar¹²,Roopa ¹²,Aggarwal Vishnu¹²,Pal Prabir³²^ORCID,Kushvaha Sunil Singh¹²^ORCID,Muthusamy Senthil Kumar¹²^ORCID

Affiliation:

1. CSIR─National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India

2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India

3. CSIR─Central Glass and Ceramic Research Institute, 196, Raja S. C. Mullick Road, Kolkata 700032, India

Funder

Council of Scientific and Industrial Research, India

University Grants Commission

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c16892

Reference51 articles.

1. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

2. A review on the GaN-on-Si power electronic devices

3. Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks

4. Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen

5. Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting