Parallel 2D Axisymmetric Fluid Modeling of CF4Discharge in an Inductively Coupled Plasma Source During SiO2Etching-Reference-Cited by-同舟云学术

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Parallel 2D Axisymmetric Fluid Modeling of CF4Discharge in an Inductively Coupled Plasma Source During SiO2Etching

Published:2014-02-19 Issue:4 Volume:11 Page:366-390
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process. Polym.

Author:

Chiu Yuan-Ming¹,Chiang Chung-Hua²,Hung Chieh-Tsan¹,Hu Meng-Hua¹,Wu Jong-Shinn¹,Hwang Feng-Nan³

Affiliation:

1. Department of Mechanical Engineering; National Chiao Tung University; Hsinchu 30010 Taiwan

2. Department of Mechanical and Automation Engineering; I-Shou University; Kaohsiung City 84001 Taiwan

3. Department of Mathematics; National Central University; Jhongli 32001 Taiwan

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Reference71 articles.

1. Nonthermal Plasma Technology as a Versatile Strategy for Polymeric Biomaterials Surface Modification: A Review

2. Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition

3. Etching of SiO2 features in fluorocarbon plasmas: Explanation and prediction of gas-phase-composition effects on aspect ratio dependent phenomena in trenches

4. Atomic Layer Deposition: An Overview

5. Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

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