Etching of SiO2 features in fluorocarbon plasmas: Explanation and prediction of gas-phase-composition effects on aspect ratio dependent phenomena in trenches-Reference-Cited by-同舟云学术

Etching of SiO2 features in fluorocarbon plasmas: Explanation and prediction of gas-phase-composition effects on aspect ratio dependent phenomena in trenches

Published:2002-03 Issue:5 Volume:91 Page:2697-2707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kokkoris George,Gogolides Evangelos,Boudouvis Andreas. G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1435833

Reference40 articles.

1. Recent advances in silicon etching for MEMS using the ASE™ process

2. Microscopic uniformity in plasma etching

3. Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching system

4. Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma

5. Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma

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