Photoabsorption and damage of OSG low-k films by VUV emission at 140-160 nm-Reference-Cited by-同舟云学术

Photoabsorption and damage of OSG low-k films by VUV emission at 140-160 nm

Published:2017-11-20 Issue:3 Volume:15 Page:1700166
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process Polym

Author:

Lopaev Dmitry V.¹^ORCID,Rakhlinsky Vladislav V.¹,Zyryanov Sergey M.¹²,Mankelevich Yury A.¹,Rakhimova Tatyana V.¹,Kurchikov Konstantin A.¹,Baklanov Mikhail R.³

Affiliation:

1. Skobeltsyn Insitute of Nuclear Physics; Moscow State University; GSP-1 Leninskie Gori 1 Moscow 119234 Russia

2. Faculty of Physics; Moscow State University; GSP-1 Leninskie Gori 1 Moscow 119991 Russia

3. Department of Microelectronics; North China University of Technology; No. 5 Jinyuanzhuang Road Shijingshan Beijing 100144 People's Republic of China

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/ppap.201700166/fullpdf

Reference16 articles.

1. Low Dielectric Constant Materials

2. Plasma processing of low-k dielectrics

3. Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

4. Impact of film structure on damage to low-kSiOCH film during plasma exposure

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