Polymorphism and Faceting in Ga 2 O 3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios-Reference-Cited by-同舟云学术

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Polymorphism and Faceting in Ga 2 O 3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios

Published:2021-11-05 Issue: Volume: Page:2100331
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Shapenkov Sevastian¹^ORCID,Vyvenko Oleg¹,Nikolaev Vladimir²³,Stepanov Sergei²³,Pechnikov Alexei²³,Scheglov Mikhail²,Varygin Georgiy¹

Affiliation:

1. Department of Physics Saint Petersburg State University 7/9 Universitetskaya emb. St. Petersburg 199034 Russia

2. Ioffe Institute RAS 26 Politekhnicheskaya st. St. Petersburg 194021 Russia

3. Perfect Crystals LLC 28A Politekhnicheskaya st. St. Petersburg 194021 Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100331

Reference22 articles.

1. Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction

2. The real structure of ε-Ga2O3 and its relation to κ-phase

3. HVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates

4. Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy

5. Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

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1. Investigation and Comparison of the Performance for β-Ga2O3 Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate;Crystals;2024-07-07

2. Структура доменных и антифазных границ в κ-фазе оксида галлия;Кристаллография;2024-02-15

3. The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide;Crystallography Reports;2024-02

4. Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE;Journal of Materials Science: Materials in Electronics;2024-01

5. Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD;Crystal Growth & Design;2023-12-18

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