Influence of Oxygen on Ga<sub>2</sub>O<sub>3</sub> Deposition at Low Temperature by MOCVD-Reference-Cited by-同舟云学术

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Published:2023-12-18 Issue:1 Volume:24 Page:171-178
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Li Wenji¹²^ORCID,Li Jiale¹²,Wang Yao¹²,Zhang Tao¹²^ORCID,Wang Wentao¹²,Gao Huhu¹²,Tian Xusheng¹²,Zhang Yachao¹²,Cheng Qian¹²^ORCID,Feng Qian¹²,Zhang Jincheng¹²^ORCID,Hao Yue¹²

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

2. Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China

Funder

National Natural Science Foundation of China

Science and Technology on Reliability Physics and Applications Technology of Electronic Component Laboratory

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00815

Reference42 articles.

1. A review of Ga2O3materials, processing, and devices

2. Band alignment of p-type oxide/ε-Ga2O3 heterojunctions investigated by x-ray photoelectron spectroscopy*

3. Characterization of single crystal β-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD

4. A self-powered β-Ga2O3/CsCu2I3 heterojunction photodiode responding to deep ultraviolet irradiation

5. State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

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