Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE
Author:
Funder
Natural Science Foundation of Tianjin City
National Natural Science Foundation of China
Innovative Talents Promotion Plan in Tianjin
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10854-024-11966-1.pdf
Reference30 articles.
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2. A.K. Mondal, L.K. Ping, M.A. Shazni Mohammad Haniff, M.A. Mohd Sarjidan, B.T. Goh, M.A. Mohamed, Temperature dependence of ultrathin mixed-phase Ga2O3 films grown on the α-Al2O3 substrate via Mist-CVD. ACS Omega 7, 2252–2259 (2022)
3. Z. Li, T. Jiao, J. Yu, D. Hu, Y. Lv, W. Li, X. Dong, B. Zhang, Y. Zhang, Z. Feng, G. Li, G. Du, Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD. Vacuum 178, 109440 (2020)
4. P.H. Megat Abdul Hedei, Z. Hassan, H.J. Quah, Effects of post-deposition annealing temperatures in argon ambient on structural, optical, and electrical characteristics of RF magnetron sputtered gallium oxide films. J. Mater. Res. Technol. 22, 795–810 (2023)
5. T. Terasako, Y. Kawasaki, M. Yagi, Growth and morphology control of β-Ga2O3 nanostructures by atmospheric-pressure CVD. Thin Solid Films 620, 23–29 (2016)
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