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Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD

  • Published:2020-08 Issue: Volume:178 Page:109440
  • ISSN:0042-207X
  • Container-title:Vacuum
  • language:en
  • Short-container-title:Vacuum

Author:

Li Zeming,Jiao Teng,Yu Jiaqi,Hu Daqiang,Lv Yuanjie,Li Wancheng,Dong XinORCID,Zhang Baolin,Zhang Yuantao,Feng Zhihong,Li Guoxing,Du Guotong

Funder

National Natural Science Foundation of China

Science and Technology Developing Project of Jilin Province

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference49 articles.

1. Recent progress in the growth of β-Ga2O3 for power electronics applications;Baldini;Mater. Sci. Semicond. Process.,2018

2. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond. Sci. Technol.,2016

3. Study on the optical properties of β-Ga2O3 films grown by MOCVD;Hu;J. Mater. Sci. Mater. Electron.,2017

4. Perspective-opportunities and future directions for Ga2O3;Mastro;ECS J. Solid State Sci. Technol.,2017

5. Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique;Goyal;J. Alloys Compd.,2014
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