Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers-Reference-Cited by-同舟云学术

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Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers

Published:2021-09-12 Issue:11 Volume:258 Page:2100190
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Vasileiadis Isaak G.¹,Belabbas Imad²^ORCID,Bazioti Calliope¹^ORCID,Smalc-Koziorοwska Julita³^ORCID,Komninou Philomela¹^ORCID,Dimitrakopulos George P.¹^ORCID

Affiliation:

1. Physics Department Aristotle University of Thessaloniki Thessaloniki 54124 Greece

2. Equipe de Cristallographie et de Simulation des Matériaux Laboratoire de Physico-Chimie des Matériaux et Catalyse Faculté des Sciences Exactes Université de Bejaia Bejaia 06000 Algeria

3. Institute of High Pressure Physics Polish Academy of Sciences Sokołowska 29/37 Warsaw 01-142 Poland

Funder

Narodowe Centrum Nauki

State Scholarships Foundation

General Secretariat for Research and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100190

Reference62 articles.

1. Dislocations in strained-layer epitaxy: theory, experiment, and applications

2. Identification of deep levels in GaN associated with dislocations

3. GaN-based light-emitting diodes on various substrates: a critical review

4. Strain Induced Deep Electronic States around Threading Dislocations in GaN

5. Electronic structure and metallization effects at threading dislocation cores in GaN

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1. Recent progress of indium-bearing group-III nitrides and devices: a review;Optical and Quantum Electronics;2024-09-12

2. Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation;Physical Review Applied;2024-06-17

3. Understanding Interfaces in AlScN/GaN Heterostructures;Advanced Functional Materials;2024-04-24

4. Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates;Scientific Reports;2023-11-07

5. The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface;Journal of Microscopy;2023-10-17

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