Space Distribution of the Chemical Composition of the Thermo-Grown SiO2SiOxSi System
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Morphology and electronic structure of Si–SiO2 interfaces and Si surfaces
2. Chemical bond and related properties of SiO2 VI. electronic structure of SiOx
3. Energy-gap variation at the Si-SiOx–SiO2 interface
4. Variation of semiconductor properties through the SiOx region of Si SiO2 interfaces
5. Si‐SiO2interface characterization from angular dependence of x‐ray photoelectron spectra
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2;Journal of The Electrochemical Society;1992-05-01
2. The Thermal Growth of Very Thin SiO2 Films A Diffusion-Controlled Process;Physica Status Solidi (a);1989-07-16
3. SiSiO2 interfacial atomic scale roughness caused by inhomogeneous thermal oxidation;Physica Status Solidi (a);1989-05-16
4. On the SiSiO2 interface roughness in VLSIMOS structures;Physica Status Solidi (a);1988-10-16
5. Theoretical Study of the Gradual Chemical Transition at the SiSiO2 Interface. II. Electronic Density of States Calculations;physica status solidi (b);1986-07-01
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