Theoretical Study of the Gradual Chemical Transition at the SiSiO2 Interface. II. Electronic Density of States Calculations
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference46 articles.
1. Isolatorphysik des SiO2, Akademie-Verlag, Berlin 1984.
2. X-Ray Photoelectron Spectroscopy of SiO2-Si Interfacial Regions: Ultrathin Oxide Films
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4. Interpretation of XPS core level shifts and structure of thin silicon oxide layers
5. Morphology and electronic structure of Si–SiO2 interfaces and Si surfaces
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1. Electronic state characterization of SiOx thin films prepared by evaporation;Journal of Applied Physics;2005-06
2. Chemical stability of Sin+ species in SiOx (x<2) thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-01
3. Theoretical and spectroscopic studies of gap-states at ultrathin silicon oxide/silicon interfaces;The Journal of Chemical Physics;1999-11
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5. A Simulation System for Diffusive Oxidation of Silicon:One-Dimensional Analysis;Zeitschrift für Naturforschung A;1991-11-01
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