Theoretical and spectroscopic studies of gap-states at ultrathin silicon oxide/silicon interfaces
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.480148
Reference26 articles.
1. Characterization of Si/SiO2 interface defects by electron spin resonance
2. Theory of continuously distributed trap states at Si‐SiO2interfaces
3. Theory of thePbcenter at the <111> Si/SiO2interface
4. A critical assessment of the overcoordination model for the Pb center at the 〈111〉 Si/SiO2 interface
5. Dangling Bond ina−Si:ZZH
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