Variation of semiconductor properties through the SiOx region of Si SiO2 interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. The Physics of SiO2 and its Interfaces;Hübner,1978
2. H.G. Neumann, R. Engelke, and K. Hübner, to be published.
3. Statistical investigations of the structure of SiOx
4. Chemical bond and related properties of SiO2 III. Core-level shifts in SiOx
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