Percolation conductivity in hafnium sub-oxides-Reference-Cited by-同舟云学术

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Percolation conductivity in hafnium sub-oxides

Published:2014-12-29 Issue:26 Volume:105 Page:262903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Islamov D. R.¹²^ORCID,Gritsenko V. A.¹²,Cheng C. H.³,Chin A.⁴

Affiliation:

1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russian Federation

2. Novosibirsk State University, Novosibirsk 630090, Russian Federation

3. Department of Mechatronic Technology, National Taiwan Normal University, Taipei 106, Taiwan

4. National Chiao Tung University, Hsinchu 300, Taiwan

Funder

National Science Council, Taiwan

Russian Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905308

Reference29 articles.

1. Constant voltage stress induced degradation in HfO[sub 2]/SiO[sub 2] gate dielectric stacks

2. Special reliability features for Hf-based high-/spl kappa/ gate dielectrics

3. High dielectric constant gate oxides for metal oxide Si transistors

4. A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

5. Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

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4. The Atomic Layer Deposition Technique for the Fabrication of Memristive Devices: Impact of the Precursor on Pre-deposited Stack Materials;New Uses of Micro and Nanomaterials;2018-10-10

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