Author:
Perevalov T. V.,Volodin V. A.,Novikov Yu. N.,Kamaev G. N.,Gritsenko V. A.,Prosvirin I. P.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. L. Montesi, M. Buckwell, K. Zarudnyi, L. Garnett, S. Hudziak, A. Mehonic, and A. J. Kenyon, IEEE Trans. Nanotechnol. 15, 428 (2016).
2. A. Mehonic, A. L. Shluger, D. Gao, I. Valov, E. Miranda, D. Ielmini, A. Bricalli, E. Ambrosi, C. Li, J. J. Yang, Q. F. Xia, and A. J. Kenyon, Adv. Mater. 30, 1801187 (2018).
3. C.-C. Hsieh, Y.-F. Chang, Y.-C. Chen, X. Wu, M. Guo, F. Zhou, S. Kim, B. Fowler, C.-Y. Lin, C.-H. Pan, T.‑C. Chang, and J. C. Lee, in Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx Based Resistive Switching Memory (IntechOpen, Rijeka, 2017), p. 227.
4. S. Sahoo and S. R. S. Prabaharan, J. Nanosci. Nanotechnol. 17, 72 (2017).
5. D. S. Jeong, R. Thomas, R. S. Katiyar, J. F. Scott, H. Kohlstedt, A. Petraru, and C. S. Hwang, Rep. Progr. Phys. 75, 076502 (2012).
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