Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?-Reference-Cited by-同舟云学术

Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

Published:2018-06-29 Issue:43 Volume:30 Page:1801187
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Mehonic Adnan¹,Shluger Alexander L.²,Gao David²,Valov Ilia³,Miranda Enrique⁴,Ielmini Daniele⁵,Bricalli Alessandro⁵,Ambrosi Elia⁵,Li Can⁶,Yang J. Joshua⁶,Xia Qiangfei⁶,Kenyon Anthony J.¹^ORCID

Affiliation:

1. Department of Electronic and Electrical Engineering UCL Torrington Place London WC1E 7JE UK

2. Department of Physics and Astronomy UCL Gower Street London WC1E 6BT UK

3. Institut für Werkstoffe der Elektrotechnik II RWTH Aachen University 52074 Aachen Germany

4. Departament d'Enginyeria Electronica Universitat Autonoma de Barcelona 08193 Bellaterra Spain

5. Dipartimento di Elettronica e Informazione Politecnico di Milano Milan 20133 Italy

6. Department of Electrical and Computer Engineering University of Massachusetts Amherst MA 01003 USA

Funder

Royal Academy of Engineering

European Research Council

Leverhulme Trust

Ministerio de Economía, Industria y Competitividad, Gobierno de España

Engineering and Physical Sciences Research Council

Defense Advanced Research Projects Agency

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201801187

Reference247 articles.

1. Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica

2. Phase Change Memory

3. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

4. Excitation of a Magnetic Multilayer by an Electric Current

Cited by 164 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of memristor based neuromorphic computation: opportunities, challenges and applications;Engineering Research Express;2024-08-07

2. Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications;Advanced Electronic Materials;2024-08-02

3. Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures;Микроэлектроника;2024-07-17

4. Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric;IEEE Electron Device Letters;2024-05

5. Study of SiO2 films implanted with 64Zn+ ions and oxidized at elevated temperatures;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2024-04-15