High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor-Reference-Cited by-同舟云学术

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High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Published:2019-05-24 Issue:13 Volume:6 Page:1900277
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Bukke Ravindra Naik¹^ORCID,Mude Narendra Naik¹,Saha Jewel Kumer¹,Jang Jin¹^ORCID

Affiliation:

1. Advanced Display Research Center (ADRC)Department of Information DisplayKyung Hee University Dongdaemoon‐gu Seoul 130–701 Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201900277

Reference61 articles.

1. High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol–Gel Gate Dielectrics

2. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Fully Transparent and Rollable Electronics

5. Redox Chloride Elimination Reaction: Facile Solution Route for Indium-Free, Low-Voltage, and High-Performance Transistors

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3. Optimizing the Crystallinity of a ZrO₂ Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors;Advanced Materials Interfaces;2024-01-22

4. Active-Matrix Array Based on Thin-Film Transistors Using Emerging Materials for Application: From Lab to Industry;Electronics;2024-01-04

5. High-performance organic thin-film transistors: principles and strategies;Journal of Materials Chemistry C;2024

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