Development of MIM/Ta2O5capacitor process for 0.10-µm DRAM-Reference-Cited by-同舟云学术

Development of MIM/Ta2O5capacitor process for 0.10-µm DRAM

Published:2004-01-22 Issue:2 Volume:87 Page:26-36
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Asano Isamu,Nakamura Yoshitaka,Hiratani Masahiko,Nabatame Toshihide,Iijima Shinpei,Saeki Tomonori,Futase Takuya,Yamomoto Satoshi,Saito Tatsuyuki,Sekiguchi Toshihiro

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference13 articles.

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5. Hiratani M Nabatame T Matsui Y Shimamoto Y Sasago Y Nakamura Y Ohji Y Asano I Kimura S A conformal ruthenium electrode for MIM capacitors in Gbit DRAMs using the CVD technology based on oxygen-controlled surface reaction 102 2000

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