1.5 nm equivalent thickness Ta/sub 2/O/sub 5/ high-k dielectric with rugged Si suited for mass production of high density DRAMs-Reference-Cited by-同舟云学术

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1.5 nm equivalent thickness Ta/sub 2/O/sub 5/ high-k dielectric with rugged Si suited for mass production of high density DRAMs

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Container-title:International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
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Author:

Asano I.,Kunitomo M.,Yamamoto S.,Furukawa R.,Sugawara Y.,Uemura T.,Kuroda J.,Kanai M.,Nakata M.,Tamaru T.,Nakamura Y.,Kawagoe T.,Yamada S.,Kawakita K.,Kawamura H.,Nakamura M.,Morino M.,Kisu T.,Iijima S.,Ohji Y.,Sekiguchi T.,Tadaki Y.

Publisher

IEEE

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of Leakage Current of Metal–Insulator–Semiconductor Ta$_{2}$O$_{5}$ Capacitors with Al$_{2}$O$_{3}$/SiON Buffer Layer;Japanese Journal of Applied Physics;2011-10-20

2. Highly Reliable MIS Capacitors With Plasma Nitridation and Doubled Dielectric-Constant Tantalum Pentoxide;IEEE Transactions on Electron Devices;2005-08

3. Combining Ta[sub 2]O[sub 5] and Nb[sub 2]O[sub 5] in Bilayered Structures and Solid Solutions for Use in MIM Capacitors;Journal of The Electrochemical Society;2005

4. Development of MIM/Ta2O5capacitor process for 0.10-µm DRAM;Electronics and Communications in Japan (Part II: Electronics);2004-01-22

5. Enhanced deposition and dielectric property of Ta/sub 2/O/sub 5/ thin films on a rugged pto electrode;IEEE Transactions on Electron Devices;2003-05

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