A Gbit-scale DRAM stacked capacitor technology with ECR MOCVD SrTiO/sub 3/ and RIE patterned RuO/sub 2/TiN storage nodes-Reference-Cited by-同舟云学术

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A Gbit-scale DRAM stacked capacitor technology with ECR MOCVD SrTiO/sub 3/ and RIE patterned RuO/sub 2/TiN storage nodes

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Container-title:Proceedings of 1994 IEEE International Electron Devices Meeting
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Lesaicherre P.-Y.,Yamamichi S.,Yamaguchi H.,Takemura K.,Watanabe H.,Tokashiki K.,Satoh K.,Sakuma T.,Yoshida M.,Ohnishi S.,Nakajima K.,Shibahara K.,Miyasaka Y.,Ono H.

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IEEE

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http://xplorestaging.ieee.org/ielx2/3058/8678/00383296.pdf?arnumber=383296

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Ta2O5Doping on Electrical Characteristics of SrTiO3Metal–Insulator–Metal Capacitors;Japanese Journal of Applied Physics;2009-08-20

2. Improved dielectric and electrical properties of (Ba,Sr)TiO3 thin films using Pt/LaNiO3 as the top-electrode material;Applied Physics A;2008-03-20

3. Very High Density (44 fF∕μm[sup 2]) SrTiO[sub 3] MIM Capacitors for RF Applications;Journal of The Electrochemical Society;2007

4. High-Performance$hboxSrTiO_3$MIM Capacitors for Analog Applications;IEEE Transactions on Electron Devices;2006-09

5. Improving Electrical Properties and Thermal Stability of (Ba,Sr)TiO3Thin Films on Cu(Mg) Bottom Electrodes;Japanese Journal of Applied Physics;2006-06-20

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