Effect of Ta2O5Doping on Electrical Characteristics of SrTiO3Metal–Insulator–Metal Capacitors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference23 articles.
1. Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
2. Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors
3. Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
4. Lanthanide (Tb)-doped HfO/sub 2/ for high-density MIM capacitors
5. Very high density RF MIM capacitors (17 fF/μm/sup 2/) using high-/spl kappa/ Al/sub 2/O3 doped Ta/sub 2/O/sub 5/ dielectrics
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Substrate Biasing Effect on the Physical Properties of Reactive RF-Magnetron-Sputtered Aluminum Oxide Dielectric Films on ITO Glasses;ACS Applied Materials & Interfaces;2014-02-12
2. Crystallized Ohmic Contact Effect in AlGaN/GaN High Electron Mobility Transistor;Japanese Journal of Applied Physics;2013-08-01
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