A conformal ruthenium electrode for MIM capacitors in Gbit DRAMs using the CVD technology based on oxygen-controlled surface reaction-Reference-Cited by-同舟云学术

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A conformal ruthenium electrode for MIM capacitors in Gbit DRAMs using the CVD technology based on oxygen-controlled surface reaction

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Container-title:2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)
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Author:

Hiratani M.,Nabatame T.,Matsui Y.,Shimamoto Y.,Sasago Y.,Nakamura Y.,Ohji Y.,Asano I.,Kimura S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6881/18528/00852786.pdf?arnumber=852786

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Storage-Node Contacts with Stacked Point-Cusp Magnetron Sp-TiN Barrier for Metal–Insulator–Metal Ru/Ta2O5/Ru Capacitors in Gigabit Dynamic Random Access Memories;Japanese Journal of Applied Physics;2004-06-09

2. Development of MIM/Ta2O5capacitor process for 0.10-µm DRAM;Electronics and Communications in Japan (Part II: Electronics);2004-01-22

3. Effect of Solvent on MOCVD of Pb(Zr, Ti)O[sub 3] Films with Liquid-Delivery Source Supply Method;Journal of The Electrochemical Society;2004

4. Investigation of the Contact Resistance between Ti/TiN and Ru in Metal-1/Plate Contacts of Ruthenium Insulator Silicon Capacitor;Japanese Journal of Applied Physics;2003-04-30

5. Effects of an Added Iodine Source (C2H5I) on Ru Metal–Organic Chemical Vapor Deposition;Chemical Vapor Deposition;2003-03-17

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