Dielectric Properties of(BaxSr1-x)TiO3Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application-Reference-Cited by-同舟云学术

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Dielectric Properties of(BaxSr1-x)TiO3Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application

Published:1994-09-30 Issue:Part 1, No. 9B Volume:33 Page:5187-5191
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuroiwa Takeharu,Tsunemine Yoshikazu,Horikawa Tsuyoshi,Makita Tetsuro,Tanimura Jyunji,Mikami Noboru,Sato Kazunao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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