Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
2. InGaN laser diodes with 50 mW output power emitting at 515 nm
3. Temperature dependence of the energy gap in semiconductors
4. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
5. Solid phase immiscibility in GaInN
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1. Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties;Journal of Alloys and Compounds;2024-05
2. The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number;Physica B: Condensed Matter;2022-04
3. The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells;Optical Materials;2018-12
4. Unraveling Efficiency Droop in InGaN-Based Yellow and Green Light-Emitting Diodes via Photoluminescence and Electroluminescence;Journal of Nanoscience and Nanotechnology;2018-11-01
5. Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy;Journal of Applied Physics;2016-07-07
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