Application of external tensile and compressive strain on a single layer InAs/GaAs quantum dot via epitaxial lift-off-Reference-Cited by-同舟云学术

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Application of external tensile and compressive strain on a single layer InAs/GaAs quantum dot via epitaxial lift-off

Published:2013-04-15 Issue:8 Volume:250 Page:1632-1635
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Omambac K. M.¹,Porquez J. G.¹,Afalla J.¹,Vasquez D.¹,Balgos M. H. M.¹,Jaculbia R.¹,Somintac A. S.¹,Salvador A. A.¹

Affiliation:

1. Condensed Matter Physics Laboratory; National Institute of Physics, University of the Philippines; Diliman Quezon City 1101 Philippines

Funder

DOST-PCIERD/GIA, UP Systems

UP-OVCRD

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201248573/fullpdf

Reference21 articles.

1. Quantum dot lasers: breakthrough in optoelectronics

2. High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

3. Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

4. Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

5. Quantum dot strain engineering of InAs∕InGaAs nanostructures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrafast photocarrier dynamics in InAs/GaAs self-assembled quantum dots investigated via optical pump-terahertz probe spectroscopy;Journal of Physics D: Applied Physics;2024-01-19

2. Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration;Journal of Luminescence;2023-06

3. Compressive and tensile strain effects on the ultrafast carrier dynamics and transport of gallium arsenide thin films on silicon and magnesium oxide substrates;Optical Materials Express;2022-11-28

4. Temperature-dependent terahertz time-domain spectroscopy of 3D, 2D, and 0D semiconductor heterostructures;Journal of Materials Science: Materials in Electronics;2020-03-06

5. Low-temperature carrier dynamics in MBE-grown InAs/GaAs single- and multi-layered quantum dots investigated via photoluminescence and terahertz time-domain spectroscopy;Optical Materials Express;2019-12-20

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