Low-temperature carrier dynamics in MBE-grown InAs/GaAs single- and multi-layered quantum dots investigated via photoluminescence and terahertz time-domain spectroscopy-Reference-Cited by-同舟云学术

Low-temperature carrier dynamics in MBE-grown InAs/GaAs single- and multi-layered quantum dots investigated via photoluminescence and terahertz time-domain spectroscopy

Published:2019-12-20 Issue:1 Volume:10 Page:178
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

De Los Reyes Alexander E.,Vasquez John Daniel,Bardolaza Hannah R.,Lopez Lorenzo P.,Chang Che-Yung,Somintac Armando S.,Salvador Arnel A.,Jang Der-Jun,Estacio Elmer S.

Funder

CHED-PCARI

DOST-PCIEERD-GIA

UP OVPAA

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

2. Quantum dot infrared photodetectors

3. Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy

4. Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy

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