Quantum dot strain engineering of InAs∕InGaAs nanostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2424523
Reference58 articles.
1. SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications
2. Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm
3. InAs/GaAs quantum dots optically active at 1.5 μm
4. self-assembled quantum dots grown by ALMBE and MBE
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