Interface characterization of atomic layer deposited Al 2 O 3 on m‐plane GaN-Reference-Cited by-同舟云学术

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Interface characterization of atomic layer deposited Al 2 O 3 on m‐plane GaN

Published:2017-02-03 Issue:8 Volume:254 Page:1600681
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Jia Ye¹,Wallace Joshua S.²,Echeverria Elena³,Gardella Joseph A.²,Singisetti Uttam¹

Affiliation:

1. Department of Electrical EngineeringUniversity at BuffaloThe State University of New YorkBuffalo, NY 14260USA

2. Department of Chemistry, University at BuffaloThe State University of New YorkBuffalo, NY 14260USA

3. Department of Physics and AstronomyUniversity of NebraskaLincoln, NE 68588USA

Funder

Office of Naval Research

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201600681

Reference54 articles.

1. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

3. Defect Donor and Acceptor in GaN

4. Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

5. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

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1. Impact of post-deposition annealing on the electronic properties of Al2O3/GaN interface by first-principles study;Surfaces and Interfaces;2024-01

2. Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes;Advanced Electronic Materials;2023-03-04

3. Accurate Band Offset Prediction of Sc₂O₃/GaN and θ-Al₂O₃/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional;ACS Applied Electronic Materials;2022-05-19

4. Influence of environmental conditions and surface treatments on the photoluminescence properties of GaN nanowires and nanofins;Nanotechnology;2021-09-14

5. 20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortion;Applied Physics A;2021-06-16

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