20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortion
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-021-04673-9.pdf
Reference35 articles.
1. J.-P. Colinge, FinFETs and Other Multi-Gate Transistors (Springer, Berlin, 2008)
2. N. Gupta, A. Vohra, R. Chaujar, Linearity performance of gate metal engineered (GME) omega gate-silicon nanowire MOSFET: a TCAD study, in 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (IEEE, 2016), pp. 208–211
3. A. Kumar, M. Tripathi, R. Chaujar, Reliability issues of In 2 O 5 Sn gate electrode recessed channel MOSFET: impact of interface trap charges and temperature. IEEE Trans. Electron Devices 65(3), 860–866 (2018)
4. P. Fiorenza, F. Giannazzo, F. Roccaforte, Characterization of SiO2/4H-SiC interfaces in 4H-SiC MOSFETs: a review. Energies 12(12), 2310 (2019)
5. F. Lindelöw, N.S. Garigapati, L. Södergren, M. Borg, E. Lind, III–V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications. Semicond. Sci. Technol. 35(6), 065015 (2020)
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synthesis, characterization, and electrochemical uric acid sensing properties of Cu3N nanoparticles;Biosensors and Bioelectronics: X;2024-10
2. Spacer engineering on multi-channel FinFET for advanced wireless applications;AEU - International Journal of Electronics and Communications;2024-05
3. RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications;Microsystem Technologies;2024-01-16
4. Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications;IEEE Transactions on Nanotechnology;2024
5. Impact of temperature variation on linearity parameters of nanotube surrounding gate (NT‐SG) MOSFETs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-14
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3