Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

Published:2016-03-04 Issue:5 Volume:253 Page:819-823
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Okada Narihito¹,Ihara Hiroshi¹,Yamane Keisuke²,Tadatomo Kazuyuki¹

Affiliation:

1. Graduate School of Science and EngineeringYamaguchi University2‐16‐1 Tokiwadai, UbeYamaguchi755‐8611Japan

2. Toyohashi University of Technology1‐1 HibarigaokaTempaku, ToyohashiAichi441‐8580Japan

Funder

Japan Science and Technology Agency

Ministry of Education, Culture, Sports, Science, and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201552783

Reference14 articles.

1. Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

2. Generalized formula for curvature radius and layer stresses caused by thermal strain in semiconductor multilayer structures

3. Growth of thick GaN layers with hydride vapour phase epitaxy

4. Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy

5. Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Counterbalancing effects of bowing in gallium nitride templates by epitaxial growth on pre-strained sapphire substrates;Ceramics International;2024-09

2. A bow-free freestanding GaN wafer;RSC Advances;2020

3. Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing;Journal of Crystal Growth;2019-04

4. Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106cm−2 range by novel two-side hydride vapor-phase epitaxial growth;Journal of Crystal Growth;2017-10

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