Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching-Reference-Cited by-同舟云学术

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Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

Published:2010-12 Issue:24 Volume:312 Page:3574-3578
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Kuei-Ming,Yeh Yen-Hsien,Wu Yin-Hao,Chiang Chen-Hao,Yang Din-Ru,Chao Chu-Li,Chi Tung-Wei,Fang Yen-Hsang,Tsay Jenq-Dar,Lee Wei-I

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. GaN Substrates—Progress, Status, and Prospects

2. Low noise characteristics of AlGaInN-based self-pulsating laser diodes

3. Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates

4. Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off

5. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanistic influence on uniformity of sheet resistance of AlGaN/GaN HEMT grown on Si substrate with the graded AlGaN buffer layers;Vacuum;2022-05

2. Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process;Japanese Journal of Applied Physics;2020-02-01

3. Growth of GaN and improvement of lattice curvature using symmetric hexagonal SiO2 patterns in HVPE growth;Japanese Journal of Applied Physics;2019-05-22

4. Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer;AIP Advances;2018-07

5. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices;Japanese Journal of Applied Physics;2016-04-06

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