Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106cm−2 range by novel two-side hydride vapor-phase epitaxial growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Leakage mechanism in GaN and AlGaN Schottky interfaces
4. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
5. Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Counterbalancing effects of bowing in gallium nitride templates by epitaxial growth on pre-strained sapphire substrates;Ceramics International;2024-09
2. Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates;Applied Physics Letters;2024-08-26
3. Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties;CrystEngComm;2023
4. Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application;Applied Physics Letters;2022-06-27
5. Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing;Journal of Crystal Growth;2019-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3