Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending-Reference-Cited by-同舟云学术

Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

Published:2004-05 Issue:5 Volume:33 Page:389-394
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Paskova T.,Darakchieva V.,Valcheva E.,Paskov P. P.,Ivanov I. G.,Monemar B.,Böttcher T.,Roder C.,Hommel D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-004-0189-4.pdf

Reference21 articles.

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2. R.P. Vaudo, G.R. Brandes, J.S. Flynn, X. Xu, M.F. Chriss, C.S. Christos, D.M. Keogh, and F.D. Tamweber, Proc. IWN Nagoya 2000: Int. Workshop on Nitride Semiconductors (Tokyo: Institute of Pure and Applied Physics, 2000), pp. 15–18.

3. T. Paskova et al., MRS Internet J. Nitride Semicond. Res. 5S1, W3.14 (2000).

4. E. Valcheva, T. Paskova, M. Abrashev, P.P. Paskov, P.O.Å. Persson, E.M. Goldys, R. Beccard, M. Heuken, and B. Monemar, J. Appl. Phys. 90, 6011 (2001).

5. T. Böttcher (Ph.D. thesis, Bremen University, 2002).

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