Epitaxial growth of GaN nanostructure by PA-MBE for UV detection application

Author:

Goswami Lalit,Pandey Rajeshwari,Gupta Govind

Funder

Dr. D.K Aswal, Director, CSIR-NPL, New Delhi

CSIR-network projects

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference59 articles.

1. Substrates for gallium nitride epitaxy;Liu;Mater. Sci. Eng.,2002

2. The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations;Fu;J. Alloys Compd.,2014

3. Synthesis of large-scale GaN nanobelts by chemical vapor deposition;Xu;Appl. Phys. Lett.,2006

4. From powder to nanowire: a simple and environmentally friendly strategy for optical and electrical GaN nanowire films;Wang;CrystEngComm,2013

5. GaN-based diodes and transistors for chemical, gas, biological and pressure sensing;Pearton;J. Phys.: Condens. Matter.,2004

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