The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations-Reference-Cited by-同舟云学术

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The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

Published:2014-05 Issue: Volume:596 Page:92-97
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Fu Nannan,Li Enling,Cui Zhen,Ma Deming,Wang Wei,Zhang Yulong,Song Sha,Lin Jie

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference26 articles.

1. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes

2. Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

3. Self-Organized GaN Quantum Wire UV Lasers

4. Single gallium nitride nanowire lasers

5. Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

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1. Self-doping effects and carrier mobility of the H-GaN-F and h-BN stacking hetero-structures;Materials Science in Semiconductor Processing;2024-05

2. Electronic properties of van der Waals heterostructures based on F-GaN-H stacking and TMDs single layer;Vacuum;2022-12

3. Electronic and optical properties of phosphorus doped InI crystal: Ab Initio Study;5th Optics Young Scientist Summit (OYSS 2022);2022-11-15

4. Influence of Dewetting Conditions on the Optical Parameters of the AuNP / GaN Nanostructure;2022 International Conference on Electrical Engineering and Photonics (EExPolytech);2022-10-20

5. Optical properties of plasmonic metal nanoparticles on GaN surface;Journal of Physics: Conference Series;2021-12-01

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