Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga-Al liquid-phase epitaxy
Author:
Affiliation:
1. Institute of Multidisciplinary Research for Advanced Materials (IMRAM); Tohoku University; Katahira 2-1-1 Sendai 980-8577 Japan
2. Ichikawa Research Laboratory; Sumitomo Metal Mining Co. Ltd.; Nakakokubu 3-18-5 Ichikawa 272-8588 Japan
Funder
JSPS KAKENHI
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451426/fullpdf
Reference21 articles.
1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2. Similarities and differences in sublimation growth of SiC and AlN
3. Growth of AlN single crystalline boules
4. Characterization of AlN single crystal fabricated by a novel growth technique, “pyrolytic transportation method”
5. Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
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