Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique-Reference-Cited by-同舟云学术

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Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique

Published:2023-01 Issue: Volume:153 Page:107167
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Adachi Masayoshi^ORCID,Hamaya Sonoko,Morikawa Daisuke,Pierce Benjamin G.,Karimi Ahmad M.,Yamagata Yuji,Tsuda Kenji,French Roger H.,Fukuyama Hiroyuki

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. Aluminum nitride (AlN);Loughin,1998

2. Optical properties of AlN determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry data;Jones;J. Mater. Res.,1999

3. Electronic band structure of Al2O3, with comparison to AlON and AlN;French;J. Am. Ceram. Soc.,1990

4. Electronic-Structure of aluminum nitride - theory and experiment;Loughin;Appl. Phys. Lett.,1993

5. Effect of oxygen incorporation in AlN thin-films;Ohuchi;J. Vac. Sci. Technol., A,1988

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis Method for Recalescence Time Obtained Using High-Speed Camera for Solidification Experiments at the Electrostatic Levitation Furnace in the International Station;INT J MICROGRAVITY S;2024

2. Growth of bulk AlN crystals;Reference Module in Materials Science and Materials Engineering;2023

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