A Theoretical Investigation of the Miscibility and Structural Properties of Inx Aly Ga1−x−y N Alloys-Reference-Cited by-同舟云学术

A Theoretical Investigation of the Miscibility and Structural Properties of Inx Aly Ga1−x−y N Alloys

Published:2018-04-24 Issue:5 Volume:255 Page:1700394
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Mohamad Ranim¹,Béré Antoine²,Hounkpati Viwanou¹,Gamarra Piero³,Chen Jun¹,Ruterana Pierre¹

Affiliation:

1. CIMAP, UMR 6252, UNICAEN, CNRS, ENSICAEN, CEA, 6 Boulevard Maréchal Juin, 14050 Caen and Pôle Universitaire d'Alençon, Campus de Damigny; 61250 Damigny France

2. Laboratoire de Physique et de Chimie de l'Environnement, Université Ouaga I Pr Joseph KI-ZERBO; 03 BP: 7021 Ouagadougou 03 Burkina Faso

3. III-VLab, 1 Avenue Augustin Fresnel, Campus Polytechnique; 91767 Palaiseau France

Funder

Agentúra Ministerstva školstva, vedy, výskumu a športu SR

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance

2. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

3. Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

4. Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

5. Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect

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