Wide-gap semiconductor InGaN and InGaAln grown by MOVPE-Reference-Cited by-同舟云学术

Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

Published:1992-02 Issue:2 Volume:21 Page:157-163
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Matsuoka T.,Yoshimoto N.,Sasaki T.,Katsui A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02655831.pdf

Reference11 articles.

1. A. Valster, M. N. Finke, M. J. B. Boermans, J. M. M. v.d.Heiden, C. J. G. R. Spreuwenberg and C. T. H. F. Lie- denbaum, 12th IEEE Int. Semicon. Laser Conf, PD-12 (1990).

2. T. Matsuoka, H. Tanaka, T. Sasaki and A. Katsui, in Gal- lium Arsenide and Related Comp.1989, Inst. Phys. Conf. Ser. No. 106, 141 (1990).

3. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett.48, 353 (1986).

4. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys.28, L2112 (1989).

5. T. Nagatomo, T. Kuboyama, H. Minamino and O. Omoto, Jpn. J. Appl. Phys.28, L1334 (1989).

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