A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices-Reference-Cited by-同舟云学术

A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO₂(Y)/Ta₂O₅/TiN/Ti Memristive Devices

Published:2022-11-03 Issue: Volume: Page:2200520
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Maldonado David¹,Belov Alexey I.²³,Koryazhkina Maria N.²³,Jiménez-Molinos Francisco¹,Mikhaylov Alexey N.²³,Roldán Juan B.¹^ORCID

Affiliation:

1. Departamento de Electrónica y Tecnología de Computadores Facultad de Ciencias Universidad de Granada Avd. Fuentenueva s/n 18071 Granada Spain

2. Laboratory of Stochastic Multistable Systems Lobachevsky State University of Nizhny Novgorod 23/3 Gagarin Avenue 603022 Nizhny Novgorod Russia

3. Laboratory of Intellectual Neuromorphic Systems Lobachevsky State University of Nizhny Novgorod 23/3 Gagarin Avenue 603022 Nizhny Novgorod Russia

Funder

Consejería de Economía, Conocimiento, Empresas y Universidad, Junta de Andalucía

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200520

Reference30 articles.

1. Memristive crossbar arrays for brain-inspired computing

2. Memristors and Memristive Systems

3. Memristive technologies for data storage, computation, encryption, and radio-frequency communication

4. In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives

5. Standards for the Characterization of Endurance in Resistive Switching Devices

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