In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives-Reference-Cited by-同舟云学术

In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives

Published:2020-08-23 Issue:11 Volume:2 Page:2000115
ISSN:2640-4567
Container-title:Advanced Intelligent Systems
language:en
Short-container-title:Advanced Intelligent Systems

Author:

Amirsoleimani Amirali¹,Alibart Fabien²³⁴^ORCID,Yon Victor²³,Xu Jianxiong¹,Pazhouhandeh M. Reza¹,Ecoffey Serge²³,Beilliard Yann²³,Genov Roman¹,Drouin Dominique²³

Affiliation:

1. Department of Electrical and Computer Engineering University of Toronto Toronto Ontario M5S2E4 Canada

2. Institut Interdisciplinaire dInnovation Technologique (3IT) Universite de Sherbrooke Sherbrooke Quebec J1K 0A5 Canada

3. Laboratoire Nanotechnologies Nanosystemes (LN2) CNRS UMI-3463 3IT Sherbrooke Quebec J1K 0A5 Canada

4. Institute of Electronics Microelectronics and Nanotechnology (IEMN) Universite de Lille 59650 Villeneuve dAscq France

Funder

European Research Council

Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aisy.202000115

Reference126 articles.

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5. GPUs and the Future of Parallel Computing

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