Standards for the Characterization of Endurance in Resistive Switching Devices-Reference-Cited by-同舟云学术

Standards for the Characterization of Endurance in Resistive Switching Devices

Published:2021-11-03 Issue:11 Volume:15 Page:17214-17231
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lanza Mario¹^ORCID,Waser Rainer²³⁴,Ielmini Daniele⁵,Yang J. Joshua⁶,Goux Ludovic⁷,Suñe Jordi⁸,Kenyon Anthony Joseph⁹,Mehonic Adnan⁹,Spiga Sabina¹⁰^ORCID,Rana Vikas³,Wiefels Stefan²,Menzel Stephan²^ORCID,Valov Ilia²^ORCID,Villena Marco A.¹¹,Miranda Enrique⁸,Jing Xu¹²,Campabadal Francesca¹³,Gonzalez Mireia B.¹³,Aguirre Fernando¹⁴,Palumbo Felix¹⁴,Zhu Kaichen¹,Roldan Juan Bautista¹⁵,Puglisi Francesco Maria¹⁶,Larcher Luca¹¹,Hou Tuo-Hung¹⁷^ORCID,Prodromakis Themis¹⁸,Yang Yuchao¹⁹^ORCID,Huang Peng¹⁹^ORCID,Wan Tianqing²⁰,Chai Yang²⁰,Pey Kin Leong²¹^ORCID,Raghavan Nagarajan²¹^ORCID,Dueñas Salvador²²,Wang Tao²³,Xia Qiangfei²⁴,Pazos Sebastian¹

Affiliation:

1. Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

2. Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

3. Peter-Grünberg-Institut (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

4. Institut für Werkstoffe der Elektrotechnik 2 (IWE2), RWTH Aachen University, Aachen 52074, Germany

5. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, Milano, 20133, Italy

6. Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States

7. Imec, Kapeldreef 75, 3001 Leuven, Belgium

8. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Barcelona 08193, Spain

9. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom

10. CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza (MB) 20864, Italy

11. Applied Materials Inc., Via Ruini, Reggio Emilia 74L 42122, Italy

12. School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, China

13. Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, Consejo Superior de Investigaciones Científicas, Bellaterra 08193, Spain

14. Unidad de Investigación y Desarrollo de las Ingenierías-CONICET, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional (UIDI-CONICET/FRBA-UTN), Buenos Aires, Medrano 951(C1179AAQ), Argentina

15. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, Granada 18071, Spain

16. Dipartimento di Ingegneria “Enzo Ferrari”, Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, Modena 41125, Italy

17. Department of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan

18. Centre for Electronics Frontiers, University of Southampton, Southampton SO171BJ, United Kingdom

19. Key Laboratory of Microelectronic Devices and Circuits (MOE), Department of Micro/nanoelectronics, Peking University, Beijing 100871, China

20. Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong

21. Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372 Singapore

22. Department of Electronics, University of Valladolid, Paseo de Belén 15, Valladolid E-47011, Spain

23. Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University 199 Ren-Ai Road, Suzhou 215123, China

24. Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003-9292, United States

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c06980

Reference179 articles.

1. Resistive Switching

2. Analog‐Type Resistive Switching Devices for Neuromorphic Computing

3. Jo, S. H.; Kumar, T.; Narayanan, S.; Lu, W. D.; Nazarian, H. 3D-Stackable Crossbar Resistive Memory Based on Field Assisted Superlinear Threshold (Fast) Selector. Proceedings from the 2014 IEEE International Electron Devices Meeting, San Francisco, CA, December 15–17, 2014; IEEE: New York, 2014; pp 160–163.

4. NbO 2 Memristive Neurons for Burst‐Based Perceptron

5. Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses

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