NbO 2 Memristive Neurons for Burst‐Based Perceptron-Reference-Cited by-同舟云学术

NbO 2 Memristive Neurons for Burst‐Based Perceptron

Published:2020-05-12 Issue:8 Volume:2 Page:2000066
ISSN:2640-4567
Container-title:Advanced Intelligent Systems
language:en
Short-container-title:Advanced Intelligent Systems

Author:

Bo Yeheng¹,Zhang Peng¹,Luo Ziqing¹,Li Shuai²,Song Juan³,Liu Xinjun¹^ORCID

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation TechnologyFaculty of ScienceTianjin University Tianjin 300354 P. R. China

2. Unité Mixte de Physique CNRS/ThalesUniversité Paris-Saclay 91767 Palaiseau France

3. Department of Emergency MedicinePutuo District Central HospitalShanghai University of Traditional Chinese Medicine Shanghai 200062 P. R. China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aisy.202000066

Reference17 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. Towards artificial neurons and synapses: a materials point of view

3. An Artificial Neuron Based on a Threshold Switching Memristor

4. Neuromorphic Silicon Neuron Circuits

5. Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices

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