Affiliation:
1. Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Kaohsiung 83347, Taiwan
2. Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, Taiwan
3. Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, Taiwan
Abstract
In this study, Ba0.6Sr0.4Ti1-xMnxO3 ceramics were fabricated by a novel ball milling technique followed by spin-coating to produce thin-film resistive memories. Measurements were made using field emission scanning electron microscopes, atomic force microscopes, X-ray diffractometers, and precision power meters to observe, analyze, and calculate surface microstructures, roughness, crystalline phases, half-height widths, and memory characteristics. Firstly, the effect of different sintering methods with different substitution ratios of Mn4+ for Ti4+ was studied. The surface microstructural changes of the films prepared by the one-time sintering method were compared with those of the solid-state reaction method, and the effects of substituting a small amount of Ti4+ with Mn4+ on the physical properties were analyzed. Finally, the optimal parameters obtained in the first part of the experiment were used for the fabrication of the thin-film resistive memory devices. The voltage and current characteristics, continuous operation times, conduction mechanisms, activation energies, and hopping distances of two types of thin-film resistive memory devices, BST and BSTM, were measured and studied under different compliance currents.
Funder
National Science Council of the Republic of China