An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode-Reference-Cited by-同舟云学术

An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode

Published:2020 Issue:5 Volume:12 Page:3267-3272
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Lei¹²³⁴⁵^ORCID,Chang Kuan-Chang¹²³⁴⁵^ORCID,Ye Cong⁶⁷⁸⁹¹⁰^ORCID,Lin Xinnan¹²³⁴⁵,Zhang Rui¹²³⁴⁵,Xu Zhong⁶⁷⁸⁹¹⁰,Zhou Yi⁶⁷⁸⁹¹⁰,Xiong Wen⁶⁷⁸⁹¹⁰,Kuo Tzu-Peng¹¹¹²¹³¹⁴¹⁵

Affiliation:

1. School of Electronic and Computer Engineering

2. Peking University

3. Shenzhen Graduate School

4. Shenzhen 518055

5. China

6. Faculty of Physics and Electronic Science

7. Hubei University

8. Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices

9. Hubei Key Laboratory of Applied Mathematics

10. Wuhan 430062

11. Department of Physics

12. National Sun Yat-sen University

13. Kaohsiung 804

14. Taiwan

15. Institute of Materials and Optoelectronics

Abstract

A method to improve RRAM performance through electrode material re-design by adopting a composite material with hafnium that exhibits superior interface properties.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

State Key Laboratory on Integrated Optoelectronics

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR08943H

Reference24 articles.

1. Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications