Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation-Reference-Cited by-同舟云学术

Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation

Published:2021 Issue:33 Volume:13 Page:14035-14040
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Lei¹²^ORCID,Dai Tianjiao¹,Liu Kai¹,Chang Kuan-Chang¹^ORCID,Zhang Rui¹,Lin Xinnan¹,Liu Heng-Jui²^ORCID,Lai Ying-Chih²,Kuo Tzu-Peng³⁴

Affiliation:

1. School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, China

2. Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan

3. Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan

4. Institute of Materials and Optoelectronics, National Sun Yat-sen University, Kaohsiung 804, Taiwan

Abstract

Achieving reliable self-compliant complementary resistive switching (CRS) in a single device through supercritical fluid-assisted ammoniation (SFA) technology.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Shenzhen Fundamental Research Program

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR03356E

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1. Neuro-inspired computing chips